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|Description||RF Amplifier 7.9-11GHz 100W GaN PAE >35% SSG >26dB|
|Data Sheet||دانلود فایل|
|PCB Layout||دانلود فایل|
Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high power amplifiers designed for military, commercial, satellite communications
and radar systems, Qorvo offers GaN-based products meeting today’s market needs and future requirements. Each device uses Qorvo’s 0.25um GaN on SiC technology which provides superior performance while maintaining high reliability. In addition, the use of SiC substrates provides the optimum thermal performance necessary for reliable high power operation
TGM2635-CP Qorvo’s TGM2635-CP is a packaged X-band, high power MMIC amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process. The TGM2635–CP operates from 8 – 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power-added efficiency.
The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 50 ohms allowing for simple system integration.
The TGM26358-CP is ideally suited for both military and commercial X band radar systems and data links.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.